1/9 july 2001 STGW12NB60H n-channel 12a - 600v - to-247 powermesh? igbt n high input impedance n low on-voltage drop (v cesat ) n off losses include tail current n low gate charge n high current capability n very high frequency operation n co-packaged with turboswitcht n typical short circuit withstand time 5micros s-family, 4 micro h family n antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has de- signed an advanced family of igbts, the power- mesh? igbts, with outstanding perfomances. the suffix "h" identifies a family optimized for high frequency applications (up to 50khz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. applications n high frequency motor controls n smps and pfc in both hard switch and resonant topologies n ups absolute maximum ratings type v ces v ce(sat) i c STGW12NB60H 600 v < 2.8 v12 a symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuos) at t c = 25c 24 a i c collector current (continuos) at t c = 100c 12 a i cm ( n ) collector current (pulsed) 96 a p tot total dissipation at t c = 25c 120 w derating factor 0.96 w/c t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c to-247 1 2 3 internal schematic diagram
STGW12NB60H 2/9 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic switching on rthj-case thermal resistance junction-case max 1.04 c/w rthj-amb thermal resistance junction-ambient max 30 c/w rthc-sink thermal resistance case-sink typ 0.1 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge = 0) v ce = max rating, t c = 25 c 10 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge , i c = 250a 35v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 12 a 2.0 2.8 v v ge = 15v, i c = 12 a, tj =125c 1.7 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce = 25 v , i c = 12 a 9.5 s c ies input capacitance v ce = 25v, f = 1 mhz, v ge = 0 950 pf c oes output capacitance 120 pf c res reverse transfer capacitance 27 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480v, i c = 12 a, v ge = 15v 68 10 30 nc nc nc i cl latching current v clamp = 480 v , tj = 150c r g = 10 w 48 a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc = 480 v, i c = 12 a r g =10 w , v ge = 15 v 5 46 ns ns (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c = 12 a r g =10 w, v ge = 15 v, tj =125c 1000 290 a/s j
3/9 STGW12NB60H electrical characteristics (continued) switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c = 12a, r ge = 10 w , v ge = 15 v 150 ns t r (v off ) off voltage rise time 27 ns t d ( off ) delay time 76 ns t f fall time 92 ns e off (**) turn-off switching loss 0.21 m j e ts total switching loss 0.49 m j t c cross-over time v cc = 480 v, i c = 12 a, r ge = 10 w , v ge = 15 v tj = 125 c 230 ns t r (v off ) off voltage rise time 76 ns t d ( off ) delay time 95 ns t f fall time 200 ns e off (**) turn-off switching loss 0.45 m j e ts total switching loss 0.74 m j thermal impedance
STGW12NB60H 4/9 transconductance transfer characteristics output characteristics collector-emitter on voltage vs collettor current collector-emitter on voltage vs temperature gate threshold vs temperature
5/9 STGW12NB60H normalized breakdown voltage vs temperature total switching losses vs temperature total switching losses vs gate resistance gate charge vs gate-emitter voltage capacitance variations total switching losses vs collector current
STGW12NB60H 6/9 switching off safe operating area
7/9 STGW12NB60H fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
STGW12NB60H 8/9 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5 o5o v2 60o 60o dia 3.55 3.65 0.14 0.143 to-247 mechanical data
9/9 STGW12NB60H information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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